PART |
Description |
Maker |
IRFM120A IRFM120ATF |
Avalanche Rugged Technology IEEE802.3af Compatible 100V N-Channel A-FET / Substitute of IRFM120
|
Fairchild Semiconductor
|
AOT1608L |
60V N-Channel Rugged Planar MOSFET
|
Alpha & Omega Semiconductor...
|
IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
AN601 |
Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments
|
Vishay Siliconix
|
IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.035ohm,身份证\u003d 18A POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*) THRU-HOLE (TO-257AA) 100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FQI34P10 FQB34P10 FQB34P10TM |
From old datasheet system 100V P-Channel MOSFET 100V P-Channel QFET
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
STS3C2F100 |
N-CHANNEL 100V - 0.110 OHM - 3A SO-8 P-CHANNEL 100V - 0.320 OHM - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET
|
ST Microelectronics
|
IRF150 JANTXV2N6764 JANTX2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
|
IRF[International Rectifier]
|
FQT7N10 FQT7N10TF |
100V N-Channel MOSFET 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET 100V N-Channel QFET
|
Fairchild Semiconductor, Corp.
|
FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|